ZnGeN₂ is a ternary semiconductor compound belonging to the nitride family, combining zinc and germanium with nitrogen in a crystalline structure. This material remains largely in the research and development phase, being investigated for wide-bandgap semiconductor applications where its thermal stability and electronic properties could offer advantages over conventional semiconductors. The material is of particular interest in the optoelectronics and high-temperature electronics communities as researchers explore nitride-based alternatives to silicon and gallium arsenide for next-generation power devices and light-emitting applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 168.1 | GPa | — | ||
Poisson's Ratio(ν) | 0.2600 | - | — | ||
Shear Modulus(G) | 97.32 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.877 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.900 | eV | — | ||
| ↳ | 1.866 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)2 entries | 11.43 | - | — | ||
| ↳ | 8.266 range 5.990–10.54median of 2 measurements | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.9701 | C/m² | — | ||
Seebeck Coefficient(S) | -64.25 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.2817 | eV/atom | — |