ZnGaO3 is a ternary oxide ceramic compound composed of zinc, gallium, and oxygen, belonging to the family of wide-bandgap semiconductor oxides. This material is primarily of research and developmental interest for optoelectronic and electronic device applications, where its semiconductor properties and thermal stability make it attractive for next-generation photonic and power electronic systems. ZnGaO3 represents an emerging alternative within the oxide semiconductor family, with potential advantages in UV detection, transparent electronics, and high-temperature device applications compared to more conventional binary oxide semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.471 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.000 | eV | DFT · OptB88vdW | ||
| ↳ | 0.000 | eV | DFT · PBE | ||
Magnetic Moment(μB)2 entries | 0.9972 | μB | DFT | ||
| ↳ | 0.000 | µB | DFT · OptB88vdW | ||
Thermoelectric Power Factor(PF)2 entries | 0.00529 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00530 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | 53.72 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 53.52 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.8029 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf)3 entries | -0.9760 | eV/atom | DFT | ||
| ↳ | 0.9600 | eV/atom | DFT | ||
| ↳ | -0.8747 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data