ZnGaN3 is a ternary ceramic compound combining zinc, gallium, and nitrogen, belonging to the family of wide-bandgap semiconductors and nitride ceramics. This material is primarily of research interest for next-generation optoelectronic and high-power electronic applications, where its nitride composition offers potential advantages in thermal stability and electrical properties compared to conventional III-V semiconductors. The specific zinc-gallium-nitrogen system is less established than pure GaN or InGaN, making it a candidate for tailored bandgap engineering and emerging device architectures in semiconductor research.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · GLLB-SC | ||
Magnetic Moment(μB) | 4.048 | μB | DFT |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 2.040 | eV/atom | DFT |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data