ZnBaO3 is a ternary oxide semiconductor compound combining zinc and barium oxides in a perovskite-like crystal structure. This material remains primarily in the research and development phase, investigated for its potential in optoelectronic and photocatalytic applications due to its wide bandgap and tunable electronic properties. It represents an emerging candidate in the family of metal oxide semiconductors for next-generation devices where conventional materials like ZnO may have limitations.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.081 | eV | DFT · PBE | ||
| ↳ | 0.000 | eV | DFT · GLLB-SC | ||
Magnetic Moment(μB) | 0.00291 | μB | DFT |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf)2 entries | -1.712 | eV/atom | DFT | ||
| ↳ | 1.980 | eV/atom | DFT |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data