ZnAs2

semiconductor

· ZnAs2

ZnAs₂ is a II-VI compound semiconductor formed from zinc and arsenic, belonging to the family of zinc chalcogenides and pnictides. It is primarily of research and developmental interest rather than a mature commercial material, investigated for its potential in high-frequency optoelectronic and thermoelectric applications where wide bandgap semiconductors are desired. The material remains largely experimental due to growth and processing challenges, but represents part of the broader exploration of binary semiconductors for specialized electronic and photonic devices.

experimental semiconductorshigh-frequency electronics researchoptoelectronic device developmentwide-bandgap semiconductor studiesthermoelectric researchcompound semiconductor materials development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	4.939	kg/m³	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions
Band Gap(Eg)2 entries	0.9100	eV	—
↳	0.2140	eV	—
Magnetic Moment(μB)	0.000	µB	—

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	—
Formation Energy(ΔHf)	-0.1341	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

ZnAs2

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control