Zn8 As8
semiconductorZn8As8 is a binary zinc arsenide compound belonging to the III-V semiconductor family, composed of zinc and arsenic in a 1:1 stoichiometric ratio. This material is primarily of research interest for optoelectronic and photovoltaic applications, where its direct bandgap and crystal structure make it a candidate for light-emitting devices and solar cells, though it remains largely experimental compared to more mature semiconductors like GaAs or InP. Engineers considering Zn8As8 should note that development remains in early stages; the material's potential advantages in cost or performance must be weighed against the limited availability of processing data and the toxicity concerns associated with arsenic-containing compounds.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01320 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.1380 | eV/atom | — |