Zn6 As4

semiconductor
· Zn6 As4

Zn₆As₄ is a III-V compound semiconductor formed from zinc and arsenic, belonging to the family of binary semiconductors with potential for optoelectronic and high-frequency applications. This material is primarily of research and developmental interest rather than a widely commercialized compound; it represents an alternative stoichiometry in the zinc-arsenic system that may offer distinct electronic bandgap and carrier transport properties compared to more conventional III-V semiconductors like GaAs or InAs. Engineers would consider this composition for specialized applications where its specific lattice parameters and band structure provide advantages in detection, switching, or high-temperature semiconductor devices, though material availability and processing maturity remain limited compared to established III-V alternatives.

Research and development semiconductorsHigh-frequency optoelectronic devicesRadiation detectionWide-bandgap electronicsThin-film deposition research

Compliance & Regulations

?ITAR?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
PropertyValueUnitConditionsSource
Band Gap(Eg)
—
eV——
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Formation Energy(ΔHf)
—
eV/atom——
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

Quality & Standards

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.