Zn₄InS₆ is a quaternary semiconductor ceramic compound belonging to the family of zinc-indium sulfides, materials designed for optoelectronic and photonic applications. This compound is primarily of research and development interest rather than established industrial production, with potential applications in wide-bandgap semiconductor devices, photocatalysis, and light-emission systems where the combination of zinc and indium provides tunable electronic properties. Engineers investigating this material would be exploring it for next-generation optoelectronic components where alternative III-V or II-VI semiconductors may have processing or cost limitations.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.082 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.1064 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.6790 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data