Zn₄InGaO₇ is a quaternary oxide ceramic composed of zinc, indium, gallium, and oxygen, belonging to the family of mixed-metal oxides with potential semiconductor or optoelectronic properties. This compound is primarily of research interest rather than established industrial use, investigated for applications in transparent conducting oxides, wide-bandgap semiconductors, or photocatalytic systems where the combination of indium and gallium oxides can be tuned for specific electronic behavior. Its ternary oxide foundation makes it a candidate for next-generation transparent electronics or advanced ceramic coatings, though it remains largely in the development phase compared to more mature binary or ternary oxide systems.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.867 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.011 | eV | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -1.708 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data