Zn₄Sn₂Sb₂O₁₂ is a mixed-metal oxide semiconductor composed of zinc, tin, and antimony oxides, belonging to the broader class of complex oxide semiconductors. This material is primarily of research and developmental interest, studied for potential applications in optoelectronic devices, gas sensing, and photocatalytic systems where the combination of multiple metal cations can tailor electronic band structure and charge-carrier properties. Engineers would consider this compound when conventional semiconductors (silicon, gallium arsenide) are unsuitable and when the tunable properties of multi-element oxides offer advantages in niche applications such as UV detection or environmental sensing.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 164.2 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 70.91 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01810 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.503 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data