Zn4 Bi4 O12
semiconductorZn₄Bi₄O₁₂ is a mixed-metal oxide semiconductor compound combining zinc and bismuth in a defined stoichiometric ratio, belonging to the class of ternary oxide semiconductors. This material is primarily of research interest for photocatalytic and optoelectronic applications, where bismuth-containing oxides are explored as alternatives to conventional semiconductors due to their narrow bandgap and visible-light absorption characteristics. While not yet in widespread industrial production, compounds in this family are being investigated for environmental remediation, photocatalytic water splitting, and next-generation thin-film electronics, offering potential advantages over single-metal oxides in terms of tunable electronic properties and improved charge carrier behavior.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |