Zn₄Bi₂Sb₂O₁₂ is a mixed-metal oxide semiconductor compound containing zinc, bismuth, and antimony in a complex oxide lattice structure. This material belongs to the family of ternary and quaternary oxide semiconductors, which are of primary interest in solid-state research rather than established high-volume industrial production. The compound is investigated for potential applications in thermoelectric devices, photoelectric sensors, and advanced ceramics where its unique band structure and oxide composition could offer advantages in specific temperature or electromagnetic environments.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.116 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.409 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data