Zn3P2S8 is a quaternary semiconductor compound combining zinc, phosphorus, and sulfur elements, belonging to the family of mixed-anion semiconductors. This material remains primarily in the research phase, with interest focused on photovoltaic and optoelectronic applications where its tunable band gap and light-absorbing properties could offer advantages in thin-film solar cells or photodetectors. While not yet widely deployed in production, compounds in this material family are investigated as potential alternatives to conventional semiconductors due to their resource availability and theoretical performance in next-generation energy conversion devices.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 3.055 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 3.070 | eV | — | ||
| ↳ | 2.374 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 10.02 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.5605 | C/m² | — | ||
Seebeck Coefficient(S) | -225.6 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.5137 | eV/atom | — |