Zn₃Ga₂N₄ is a ternary nitride ceramic compound combining zinc, gallium, and nitrogen, belonging to the family of wide-bandgap semiconducting ceramics. This material is primarily of research and developmental interest for next-generation semiconductor and optoelectronic applications, where its unique crystal structure and electronic properties offer potential advantages in high-temperature, high-power, or UV-responsive devices compared to binary nitrides like GaN or AlN.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.959 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.2950 | eV | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.1636 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.09361 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data