Zn3 As2 O16 H16 — Properties & Data | MatWorld

Zn3 As2 O16 H16

semiconductor

· Zn3 As2 O16 H16

Zn₃As₂O₁₆H₁₆ is a hydrated zinc arsenate compound belonging to the layered oxide-hydroxide semiconductor family. This material is primarily of research and academic interest rather than established industrial production, with potential applications in optoelectronic devices, photocatalysis, and environmental remediation where arsenic-based semiconductors show promise for tunable band gaps and heterostructure engineering. The hydrated crystal structure and zinc-arsenic composition make it notable for studying defect chemistry and ion transport in mixed-valence semiconductor systems.

photocatalytic applicationsresearch semiconductorsoptoelectronic devicesenvironmental remediationcrystal structure studiestheoretical materials modeling

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.670	eV	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.051	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Zn3 As2 O16 H16

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control