Zn₂GaAgSe₄ is a quaternary semiconducting compound combining zinc, gallium, silver, and selenium—a complex chalcogenide material that sits at the intersection of semiconductor and optoelectronic research. This compound is primarily explored in laboratory and emerging applications rather than established industrial production, with research focus on its potential as a photovoltaic absorber, nonlinear optical material, or detector for ionizing radiation. Engineers would consider this material for next-generation semiconductor devices where the specific bandgap, carrier mobility, or optical properties of this quaternary system offer advantages over simpler binary or ternary alternatives, though commercial maturity and scalable synthesis remain active research challenges.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 57.09 | GPa | — | ||
Poisson's Ratio(ν) | 0.3300 | - | — | ||
Shear Modulus(G) | 23.15 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.327 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.6460 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00750 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.5629 | eV/atom | — |