Zn₂Te₂ is a II-VI compound semiconductor composed of zinc and tellurium, belonging to the family of wide-bandgap semiconductors. This material is primarily of research interest rather than widespread industrial production, explored for optoelectronic and photovoltaic device applications due to its semiconductor properties. Zn₂Te₂ and related zinc telluride compounds are investigated as potential alternatives to more established II-VI materials (like CdTe) for radiation detection, infrared sensors, and next-generation photovoltaic systems, though further development is needed for commercial viability.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 45.11 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 22.03 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.079 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4520 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data