Zn1 Te1
semiconductorZinc telluride (ZnTe) is a II-VI compound semiconductor with a zinc blende crystal structure, combining a Group II metal (zinc) with a Group VI chalcogen (tellurium). It is primarily used in optoelectronic and infrared applications where its direct bandgap and tunable optical properties are advantageous, including acousto-optic modulators, electro-optic devices, and infrared detectors operating in the 3–14 μm wavelength range. ZnTe is notable for its high electro-optic coefficient and transparency in the mid-infrared spectrum, making it preferable to some alternatives in specialized optical systems, though it remains less common than wider-bandgap semiconductors like GaN or SiC in mainstream applications; research continues into bulk crystal growth and thin-film deposition methods to improve material quality and reduce defect densities.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | Pa | — | — | |
Shear Modulus(G) | — | Pa | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |