Zn₁Sn₄O₈ is a mixed-valence metal oxide semiconductor belonging to the family of tin-zinc compounds, characterized by a complex crystal structure with potential for electronic and photonic applications. This material is primarily of research interest for transparent conductive oxide (TCO) coatings, gas sensing devices, and photocatalytic applications, where the combination of zinc and tin oxides offers tunable bandgap properties and chemical stability. The material represents an alternative to indium tin oxide (ITO) in applications seeking cost reduction or enhanced performance in specific wavelength ranges, though it remains largely in the development phase compared to more mature oxide semiconductor technologies.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 70.09 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 38.21 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.514 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.595 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data