Zn1 Ir1 O3 — Properties & Data | MatWorld

Zn1 Ir1 O3

semiconductor

· Zn1 Ir1 O3

ZnIrO₃ is an experimental mixed-metal oxide semiconductor combining zinc and iridium in a ternary oxide structure. This material is primarily investigated in research contexts for optoelectronic and photocatalytic applications, where the combination of zinc oxide's wide bandgap semiconductivity with iridium's high catalytic activity and stability offers potential advantages over single-component oxides for advanced energy conversion and environmental remediation.

photocatalytic water treatmentoxygen evolution catalysisthin-film optoelectronicssolar energy conversionelectrochemical sensingresearch-phase materials

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00730	eV	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.4330	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Zn1 Ir1 O3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control