Zn1 I2
semiconductorZinc iodide (ZnI₂) is an inorganic semiconductor compound belonging to the II-VI semiconductor family, characterized by zinc cations paired with iodide anions in a crystalline structure. This material is primarily explored in research contexts for optoelectronic and photonic applications, including scintillation detectors, radiation detection systems, and potential photovoltaic devices, where its wide bandgap and high atomic number make it valuable for converting high-energy radiation or light into electrical signals. While less commercially mature than competing wide-bandgap semiconductors, ZnI₂ is notable for its potential in nuclear and medical imaging applications due to its sensitivity to gamma rays and X-rays, though practical device implementation requires careful control of crystal quality and defect management.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | Pa | — | — | |
Shear Modulus(G) | — | Pa | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |