Zinc germanium oxide (ZnGeO₃) is a ternary oxide semiconductor compound combining zinc and germanium oxides in a 1:1:3 stoichiometry. This material is primarily of research and development interest rather than established in high-volume production, explored for its potential in optoelectronic and photocatalytic applications where the bandgap and crystal structure of mixed-metal oxides offer advantages over single-component alternatives. The zinc-germanium oxide system is investigated for UV-responsive sensing, photocatalytic degradation, and potentially transparent conductive or luminescent device components, though maturity and scalability remain limited compared to widely deployed semiconductors like ZnO or GaAs.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 194.8 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 85.88 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.2817 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.138 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data