ZnGa₂Te₄ is a wide-bandgap semiconductor compound belonging to the II-VI group of ternary chalcogenides, combining zinc and gallium cations with tellurium anions. This material is primarily of research and development interest rather than established commercial production, with potential applications in optoelectronic and high-energy radiation detection devices where its semiconducting properties and crystal structure could enable performance advantages over simpler binary semiconductors.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 33.16 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 21.41 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.9904 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3700 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data