Zn0.9S0.9Ga0.1P0.1

semiconductor

· Zn0.9S0.9Ga0.1P0.1

Zn0.9S0.9Ga0.1P0.1 is a quaternary semiconductor alloy composed of zinc, sulfur, gallium, and phosphorus, representing a doped variant of zinc sulfide (ZnS) with partial gallium and phosphorus substitution. This material falls within the II-VI semiconductor family and is primarily investigated in research contexts for optoelectronic and photonic applications where bandgap engineering through alloying is desired. The gallium and phosphorus dopants modulate the electronic structure relative to binary ZnS, making it relevant for tuning emission wavelengths and carrier transport properties in experimental devices.

optoelectronic researchphotoluminescent devicesbandgap engineeringUV-visible emitterssemiconductor heterostructuresexperimental light-emitting materials

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.800	eV	—

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Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Zn0.9S0.9Ga0.1P0.1

Electrical Properties

Regulatory Screening

Environmental

Export Control