Zn0.9Ga0.1P0.1S0.9

semiconductor
· Zn0.9Ga0.1P0.1S0.9

Zn₀.₉Ga₀.₁P₀.₁S₀.₉ is a quaternary semiconductor compound combining zinc, gallium, phosphorus, and sulfur—a ternary alloy variant of zinc phosphide (ZnP) and zinc sulfide (ZnS) with partial gallium substitution. This is a research-stage material primarily explored for optoelectronic and photovoltaic applications, where the gallium doping modulates the bandgap energy to tune light absorption and emission properties beyond what binary or ternary semiconductors provide. The mixed phosphide-sulfide composition with controlled gallium alloying offers potential advantages in solar cells, photodetectors, and light-emitting devices where bandgap engineering and defect reduction are critical, though its development remains largely experimental compared to mature alternatives like CdTe or GaAs.

thin-film solar cellsphotodetectorslight-emitting devicesbandgap engineeringresearch optoelectronicsII-VI semiconductor development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
PropertyValueUnitConditionsSource
Band Gap(Eg)
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Regulatory Screening

Environmental

Export Control

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