Zn0.9Ga0.1As0.1Se0.9

semiconductor

· Zn0.9Ga0.1As0.1Se0.9

Zn₀.₉Ga₀.₁As₀.₁Se₀.₉ is a quaternary III-V semiconductor alloy combining zinc, gallium, arsenic, and selenium elements, designed to engineer the bandgap and lattice properties for optoelectronic applications. This is a research-phase compound primarily explored for infrared optics and photonic devices where tuning the bandgap between binary zinc selenide and gallium arsenide semiconductors offers advantages over single-phase alternatives. The material family is notable for enabling wavelength-specific optical components and detectors in the mid- to long-wavelength infrared region where conventional semiconductors fall short.

infrared optoelectronicsphotonic integrated circuitsIR detectors and sensorsquantum well structuresresearch-phase optical materialsbandgap engineering

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.340	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Zn0.9Ga0.1As0.1Se0.9

Electrical Properties

Regulatory Screening

Environmental

Export Control