Zn0.99S0.99Ga0.01P0.01

semiconductor

· Zn0.99S0.99Ga0.01P0.01

Zn0.99S0.99Ga0.01P0.01 is a wide-bandgap semiconductor alloy based on zinc sulfide (ZnS) with small additions of gallium and phosphorus dopants, belonging to the II-VI compound semiconductor family. This is a research-oriented material designed to modify the optical and electronic properties of ZnS for optoelectronic applications, particularly where tuning of bandgap or carrier concentration is needed compared to undoped ZnS. The dopant strategy (Ga and P substitution) is typical of materials engineering aimed at enhancing luminescence efficiency, carrier mobility, or device performance in UV-visible emitters and detectors.

UV-visible light-emitting devicesphotodetectors and sensorsthin-film optoelectronicsphosphor and scintillator researchwide-bandgap semiconductor research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	3.700	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Zn0.99S0.99Ga0.01P0.01

Electrical Properties

Regulatory Screening

Environmental

Export Control