Zn₀.₉₉Hg₀.₀₁Se is a mercury-doped zinc selenide compound, a II-VI semiconductor alloy in the zinc chalcogenide family. The trace mercury doping modifies the electronic and optical properties of the host ZnSe matrix, typically used in research contexts to tailor bandgap energy and carrier dynamics. This material finds application in infrared optoelectronics and experimental photonic devices where precise control of optical absorption edges is required, and represents an emerging approach to band-engineering in wide-bandgap semiconductors for next-generation detectors and emitters.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.600 | eV | — |