Zn₀.₉₉Ga₀.₀₁As₀.₀₁Se₀.₉₉ is a quaternary III-V semiconductor alloy based on zinc selenide, with small amounts of gallium and arsenic incorporated to modify its electronic and optical properties. This is primarily a research and development material used to engineer the bandgap and carrier dynamics for specialized optoelectronic and photonic applications. The controlled doping and alloying strategy makes it relevant for engineers working on tunable infrared detectors, nonlinear optical devices, or high-efficiency solar cells where precise bandgap engineering is critical.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.590 | eV | — |