Zn0.95S0.95Ga0.05P0.05 is a quaternary semiconductor alloy within the II-VI compound family, combining zinc sulfide with small amounts of gallium and phosphorus dopants to tune its electronic and optical properties. This material is primarily investigated for optoelectronic applications where bandgap engineering is critical, particularly in light-emitting devices, photodetectors, and window layers in solar cells where the gallium and phosphorus substitutions modify carrier concentration and emission wavelengths compared to binary ZnS. The doping strategy makes this compound notable in research contexts for tailoring device performance without requiring lattice-mismatched heterostructures.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.700 | eV | — |