Zn0.85Hg0.15Se1
semiconductorZn₀.₈₅Hg₀.₁₅Se is a mercury-containing II-VI semiconductor alloy formed by partial substitution of zinc with mercury in zinc selenide, creating a narrow-bandgap material intermediate between ZnSe and HgSe. This compound is primarily a research material studied for infrared (IR) optoelectronic devices, particularly where sensitivity to mid- and far-infrared wavelengths is required; it represents an important class of tunable-bandgap semiconductors that allow engineers to engineer optical response across the infrared spectrum without changing material platform. The mercury incorporation shifts the electronic bandgap lower than pure ZnSe, making it relevant for thermal imaging, IR detectors, and spectroscopy applications where conventional visible-range semiconductors are insensitive.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |