Zn0.85Ga0.15As0.15Se0.85
semiconductorZn₀.₈₅Ga₀.₁₅As₀.₁₅Se₀.₈₅ is a quaternary III-V semiconductor alloy combining zinc, gallium, arsenic, and selenium—a research-stage compound engineered to tune the bandgap and lattice parameters for specialized optoelectronic applications. This material family is investigated primarily in laboratory settings for infrared detectors, photovoltaic devices, and wide-bandgap semiconductor applications where conventional binary or ternary compounds (like GaAs or GaSe) do not meet performance requirements. The quaternary composition allows fine control over electronic properties, making it particularly relevant for mid-infrared imaging systems and space-based sensor applications where material responsivity and thermal stability are critical.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |