Zn0.42Ga0.58As0.58Se0.42

semiconductor

· Zn0.42Ga0.58As0.58Se0.42

Zn₀.₄₂Ga₀.₅₈As₀.₅₈Se₀.₄₂ is a quaternary III-V semiconductor alloy combining zinc, gallium, arsenic, and selenium—a research compound engineered to tune its bandgap and lattice parameters for specialized optoelectronic applications. This mixed-anion composition sits in the experimental domain, developed primarily for infrared (IR) detection and photovoltaic research where conventional binary/ternary semiconductors cannot achieve the required spectral response or lattice matching to alternative substrates. The material is notable as a candidate for high-bandgap engineering in heterojunction devices and as a potential platform for tuning optical properties beyond the capabilities of GaAs or GaSe alone, though production and device integration remain primarily in research laboratories.

infrared detectorsbandgap engineeringheterojunction photovoltaicsoptoelectronic researchlattice-matched substrates

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.670	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Zn0.42Ga0.58As0.58Se0.42

Electrical Properties

Regulatory Screening

Environmental

Export Control