Zn0.2Hg0.8Te1

semiconductor

· Zn0.2Hg0.8Te1

Zn₀.₂Hg₀.₈Te is a narrow-bandgap II-VI semiconductor alloy combining zinc, mercury, and tellurium, belonging to the mercury cadmium telluride (HgCdTe) family of infrared detector materials. This composition is primarily a research and specialized engineering material used in infrared sensing and imaging applications, particularly where detection in the mid- to long-wave infrared spectrum is required; mercury telluride-based alloys are valued for their tunable bandgap and high carrier mobility, making them competitive with alternatives like InSb and bolometer arrays in cryogenically cooled thermal imaging systems.

infrared detectorsthermal imaging sensorsmilitary surveillance systemsspace-based radiometryresearch-grade photodetectors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.07000	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Zn0.2Hg0.8Te1

Electrical Properties

Regulatory Screening

Environmental

Export Control