Zn0.15Ga0.85As0.85Se0.15
semiconductorZn₀.₁₅Ga₀.₈₅As₀.₈₅Se₀.₁₅ is a quaternary III-V semiconductor alloy composed of zinc, gallium, arsenic, and selenium, engineered to tune the bandgap and lattice properties between gallium arsenide (GaAs) and related compounds. This is a research-phase material rather than a commercial standard, used to explore bandgap engineering and lattice matching for optoelectronic and photovoltaic applications where intermediate electronic properties are needed between conventional binary or ternary semiconductors. The zinc incorporation and selenium substitution allow fine control of optical absorption edges and carrier transport characteristics, making it relevant for specialized photon conversion devices, space-qualified solar cells, and infrared detector development where conventional materials lack sufficient flexibility.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |