Zn0.01Ga0.99P0.99Se0.01

semiconductor

· Zn0.01Ga0.99P0.99Se0.01

Zn0.01Ga0.99P0.99Se0.01 is a heavily gallium-doped wide bandgap III-V semiconductor compound with minor zinc and selenium substitution on the gallium and phosphide lattice sites, respectively. This is a research-stage material composition that modulates the optoelectronic properties of gallium phosphide (GaP) through controlled doping and alloying; such engineered bandgap materials are investigated for tuning wavelength emission, carrier transport, and thermal stability in photonic and power electronics applications. Compared to commercial GaP homojunctions or standard GaAs heterojunctions, this zinc-selenium doped variant targets specific performance windows in UV-to-visible light emission and high-voltage switching where precise bandgap engineering is critical.

Research optoelectronic devicesTunable light-emitting diodesWide-bandgap semiconductor power electronicsPhotonic integrated circuitsHigh-temperature high-voltage switches

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.240	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Zn0.01Ga0.99P0.99Se0.01

Electrical Properties

Regulatory Screening

Environmental

Export Control