Zn(GaTe2)2 is a ternary chalcogenide ceramic compound combining zinc, gallium, and tellurium—a material family explored primarily in semiconductor and optoelectronic research rather than established high-volume engineering applications. This compound belongs to the class of wide-bandgap semiconductors and photoresponsive materials, with potential for infrared detection, photovoltaic devices, and nonlinear optical applications where telluride-based ceramics offer tunable electronic properties. Engineers would consider this material for emerging technologies in sensing and energy conversion where conventional semiconductors reach performance limits, though it remains largely in development stage with limited commercial adoption.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 28.37 | GPa | DFT | ||
Shear Modulus(G) | 18.75 | GPa | DFT |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Dielectric Constant (Relative Permittivity)(εr)2 entries | 13.55 | - | DFT · PBE | ||
| ↳ | 12.72 range 11.41–14.02median of 2 measurements | - | DFT · PBEsol | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | DFT · PBE | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | DFT · PBE | ||
Piezoelectric Modulus(eij) | 0.03700 | C/m² | DFT · PBE | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | DFT · PBE |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data