YScOFN — Properties & Data | MatWorld

YScOFN

semiconductor

· YScOFN

YScOFN is an experimental oxynitride semiconductor compound combining yttrium, scandium, oxygen, and nitrogen elements. This material belongs to the emerging family of metal oxynitride semiconductors being researched for next-generation optoelectronic and photocatalytic applications. It represents an alternative approach to conventional wide-bandgap semiconductors, potentially offering tunable electronic properties through compositional engineering of the anion framework.

photocatalysis and water splittingvisible-light responsive semiconductorsresearch and development phaseoptoelectronic device developmentnext-generation solar cellsnitrogen-doped wide-bandgap materials

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.800	eV	DFT · GLLB-SC
Magnetic Moment(μB)	7.103e-16	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.7200	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

YScOFN

Electrical Properties

Other Properties

Regulatory Screening

Environmental

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