YPtO2N is an experimental ternary oxynitride semiconductor combining yttrium, platinum, oxygen, and nitrogen phases. While not yet widely deployed in commercial applications, this material belongs to the emerging class of mixed-anion semiconductors being investigated for photocatalysis, electronics, and energy conversion where the oxynitride framework can enable tunable bandgaps and enhanced light absorption compared to traditional oxides or nitrides alone.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.2000 | eV | DFT · GLLB-SC | ||
Magnetic Moment(μB) | 0.00485 | μB | DFT |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.280 | eV/atom | DFT |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data