YInOFN — Properties & Data | MatWorld

YInOFN

semiconductor

· YInOFN

YInOFN is an experimental oxynitride semiconductor compound combining yttrium, indium, oxygen, and nitrogen elements. This material belongs to the emerging class of wide-bandgap semiconductors and nitride-based compounds, primarily investigated in research settings for optoelectronic and photocatalytic applications. Its layered oxynitride structure offers potential advantages in visible-light absorption and charge carrier properties compared to conventional oxide or nitride semiconductors, making it a candidate for next-generation photocatalysis, photovoltaics, and LED development.

photocatalytic water splittingvisible-light photocatalystssemiconductor researchoptoelectronic devicesenvironmental remediationnext-generation LEDs

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.300	eV	DFT · GLLB-SC
Magnetic Moment(μB)	4.168e-15	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.140	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

YInOFN

Electrical Properties

Other Properties

Regulatory Screening

Environmental

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