YGaO2S — Properties & Data | MatWorld

YGaO2S

semiconductor

· YGaO2S

YGaO2S is a rare-earth semiconductor compound combining yttrium, gallium, oxygen, and sulfur in an oxysulfide structure, representing an emerging class of wide-bandgap semiconductors. Currently in the research phase, this material family is being investigated for optoelectronic and photonic applications where its unique bandgap and luminescent properties could enable ultraviolet to visible light conversion, potentially outperforming conventional phosphors and wide-gap semiconductors in specialized niche applications.

phosphor materialsultraviolet detectionphotoluminescent deviceswide-bandgap semiconductorsemerging optoelectronicsrare-earth compounds

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.200	eV	DFT · GLLB-SC
Magnetic Moment(μB)	-0.000103	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.6400	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

YGaO2S

Electrical Properties

Other Properties

Regulatory Screening

Environmental

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