Yb₃Ga₁C₁ is an experimental ternary compound semiconductor combining ytterbium, gallium, and carbon, representing a rare-earth intermetallic carbide system. Research compounds in this family are primarily investigated for exotic electronic and thermal properties driven by rare-earth elements, with potential applications in high-temperature semiconducting devices, though commercial use remains limited and material processing/scalability challenges persist. Engineers considering this material should recognize it as a specialized research compound requiring validation for specific device requirements rather than an established engineering solution.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 41.60 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 12.60 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01150 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.04200 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data