Yb2 Te1 O2 — Properties & Data | MatWorld

Yb2 Te1 O2

semiconductor

· Yb2 Te1 O2

Yb₂Te₁O₂ is an experimental rare-earth mixed-anion semiconductor combining ytterbium, tellurium, and oxygen in a layered oxide-chalcogenide structure. This compound belongs to the emerging class of hybrid organic-inorganic and mixed-anion semiconductors under investigation for next-generation optoelectronic and thermoelectric devices, where the coupling of rare-earth electronic properties with telluride chemistry offers potential advantages in bandgap tuning and charge carrier mobility compared to conventional binary oxides or tellurides.

Thermoelectric energy conversionOptoelectronic devicesInfrared detectorsResearch and developmentSolid-state electronicsHigh-temperature semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00830	eV	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.326	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

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Yb2 Te1 O2

Electrical Properties

Other Properties

Regulatory Screening

Environmental

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