Yb₁Bi₂Br₁O₄ is an ytterbium-bismuth bromide oxide semiconductor, a mixed-halide perovskite-related compound currently in research development rather than established production. This material belongs to the emerging class of halide semiconductors being investigated for optoelectronic and photovoltaic applications, where the combination of rare-earth (ytterbium) and bismuth elements offers tunable band gaps and potential stability advantages over lead-based alternatives. The bromide-oxide hybrid structure distinguishes it from conventional semiconductors and makes it a candidate for next-generation light-emitting, photovoltaic, or radiation-detection devices where lead-free compositions are prioritized.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 69.81 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 30.23 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.425 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.805 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data