Y₂GeI₂ is an experimental semiconductor compound combining yttrium, germanium, and iodine, belonging to the family of halide perovskites and related mixed-metal semiconductors under active research for next-generation optoelectronic devices. This material is primarily of interest in laboratory settings rather than established industrial production, with potential applications in photovoltaic cells, photodetectors, and light-emitting devices where tunable bandgaps and solution-processable synthesis methods offer advantages over conventional silicon-based alternatives. The incorporation of heavy elements (Ge, I) and rare-earth metal (Y) suggests promise for radiation detection and high-efficiency light conversion, though stability and scalability remain key research challenges compared to commercially mature semiconductors.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 26.08 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 18.05 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.1367 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.320 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data