Y₁In₁Ag₂ is an experimental ternary intermetallic semiconductor compound combining yttrium, indium, and silver. This material belongs to the family of rare-earth intermetallics under active research for potential optoelectronic and thermoelectric applications, though it remains primarily in the development phase rather than established industrial production. The combination of rare-earth (yttrium) and post-transition metal (indium, silver) components suggests interest in tuning electronic properties for specialized semiconductor devices where conventional III-V or group IV semiconductors are unsuitable.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 80.83 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 29.36 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01890 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4000 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data