Y1 In1 — Properties & Data | MatWorld

Y1 In1

semiconductor

· Y1 In1

Y1In1 is a binary III-V semiconductor compound composed of yttrium and indium, representing an emerging material in the wide-bandgap semiconductor family. This compound is primarily of research interest for advanced optoelectronic and high-temperature electronic applications, where its properties may enable devices operating in extreme conditions or with enhanced performance characteristics compared to conventional semiconductors like GaAs or InP.

Research and development semiconductorsHigh-temperature electronicsWide-bandgap optoelectronicsNext-generation RF devicesExperimental photonic componentsQuantum device prototyping

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	60.40	GPa	DFT · OptB88vdW
Shear Modulus(G)	28.44	GPa	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.01140	eV	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.5220	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Y1 In1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control