Y1 Er1 In2 — Properties & Data | MatWorld

Y1 Er1 In2

semiconductor

· Y1 Er1 In2

Y1Er1In2 is an intermetallic compound combining yttrium, erbium, and indium in a 1:1:2 stoichiometric ratio, belonging to the rare-earth intermetallic family. This is a research-phase material with potential applications in optoelectronics and advanced functional materials, as erbium-containing compounds are known for photoluminescent and rare-earth-doped applications, while indium incorporation typically enhances electronic or semiconducting behavior. The specific yttrium-erbium-indium composition is not widely commercialized, making it of primary interest to materials researchers exploring novel rare-earth semiconductor systems rather than established industrial production.

rare-earth optoelectronics (research)photonic materials developmentsemiconductor research compoundsrare-earth doped systems

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.01310	eV	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.4840	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Y1 Er1 In2

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control