Y1Bi2Br1O4 is an experimental mixed-metal oxyhalide semiconductor combining yttrium, bismuth, bromine, and oxygen in a layered or framework structure. This compound belongs to the family of halide perovskites and bismuth-based semiconductors under active research for optoelectronic and photovoltaic applications. While not yet established in mainstream industrial production, materials in this chemical class show promise due to their tunable bandgaps, potential for solution processing, and reduced toxicity compared to lead-based alternatives, making them of interest to researchers developing next-generation solar cells, photodetectors, and light-emitting devices.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 80.50 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 44.26 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.461 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.179 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data