WSe2
semiconductorTungsten diselenide (WSe₂) is a two-dimensional transition metal dichalcogenide semiconductor that can be exfoliated into thin layers down to single-atom thickness, making it a promising material for next-generation electronics and optoelectronics. While primarily in the research and development phase rather than widespread industrial production, WSe₂ is being actively investigated for applications requiring direct bandgap semiconductors with strong light-matter interaction, particularly where conventional silicon reaches scaling limits. Engineers and researchers select WSe₂ over bulk semiconductors or other 2D materials because of its favorable electronic properties for field-effect transistors, photodetectors, and light-emitting devices when engineered at monolayer or few-layer thickness.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 59.89 | GPa | — | ||
Exfoliation Energy(Eexf) | 79.63 | meV/atom | — | ||
Poisson's Ratio(ν) | 0.2200 | - | — | ||
Shear Modulus(G) | 43.19 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 8.939 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.350 | eV | — | ||
| ↳ | 1.046 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)2 entries | 10.26 | - | — | ||
| ↳ | 15.42 | - | — | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -617.4 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.5446 | eV/atom | — |