WSe2
semiconductorTungsten diselenide (WSe₂) is a two-dimensional transition metal dichalcogenide semiconductor that can be exfoliated into thin layers down to single-atom thickness, making it a promising material for next-generation electronics and optoelectronics. While primarily in the research and development phase rather than widespread industrial production, WSe₂ is being actively investigated for applications requiring direct bandgap semiconductors with strong light-matter interaction, particularly where conventional silicon reaches scaling limits. Engineers and researchers select WSe₂ over bulk semiconductors or other 2D materials because of its favorable electronic properties for field-effect transistors, photodetectors, and light-emitting devices when engineered at monolayer or few-layer thickness.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | Pa | — | — | |
Exfoliation Energy(Eexf) | — | meV/atom | — | — | |
Poisson's Ratio(ν) | — | - | — | — | |
Shear Modulus(G) | — | Pa | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | — | kg/m³ | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | — | eV | — | — | |
| ↳ | — | eV | — | — | |
Dielectric Constant (Relative Permittivity)(εr)2 entries | — | - | — | — | |
| ↳ | — | - | — | — | |
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | — | |
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | — | |
Magnetic Moment(μB) | — | µB | — | — | |
Piezoelectric Modulus(eij) | — | C/m² | — | — | |
Seebeck Coefficient(S) | — | µV/K | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | — | eV/atom | — | — | |
Formation Energy(ΔHf) | — | eV/atom | — | — |